AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan; Y. C. Lee; S. S. Ng; F. K. Yam; Y. Liu; Z. Rang; M. Z. Kauser; P. P. Ruden; M. I. Nathan

doi:10.1002/pssc.200565155

AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan
, Y. C. Lee
, S. S. Ng
, F. K. Yam
, Y. Liu
, Z. Rang
, M. Z. Kauser
, P. P. Ruden
, M. I. Nathan

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report on the effects of hydrostatic pressure on an Al _xGa_1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al _xGa_1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

Original language	English (US)
Pages (from-to)	2287-2290
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565155
State	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

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@article{ca10efcd031549a4b727b9f445aaeed9,

title = "AlGaN metal-semiconductor-metal structure for pressure sensing applications",

abstract = "We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24\%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.",

author = "Z. Hassan and Lee, \{Y. C.\} and Ng, \{S. S.\} and Yam, \{F. K.\} and Y. Liu and Z. Rang and Kauser, \{M. Z.\} and Ruden, \{P. P.\} and Nathan, \{M. I.\}",

year = "2006",

doi = "10.1002/pssc.200565155",

language = "English (US)",

volume = "3",

pages = "2287--2290",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - AlGaN metal-semiconductor-metal structure for pressure sensing applications

AU - Hassan, Z.

AU - Lee, Y. C.

AU - Ng, S. S.

AU - Yam, F. K.

AU - Liu, Y.

AU - Rang, Z.

AU - Kauser, M. Z.

AU - Ruden, P. P.

AU - Nathan, M. I.

PY - 2006

Y1 - 2006

N2 - We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

AB - We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

UR - https://www.scopus.com/pages/publications/33746354943

UR - https://www.scopus.com/pages/publications/33746354943#tab=citedBy

U2 - 10.1002/pssc.200565155

DO - 10.1002/pssc.200565155

M3 - Conference article

AN - SCOPUS:33746354943

SN - 1862-6351

VL - 3

SP - 2287

EP - 2290

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

AlGaN metal-semiconductor-metal structure for pressure sensing applications

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