AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan; Y. C. Lee; S. S. Ng; F. K. Yam; Y. Liu; Z. Rang; M. Z. Kauser; P. P. Ruden; M. I. Nathan

doi:10.1002/pssc.200565155

AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam, Y. Liu, Z. Rang, M. Z. Kauser, P. P. Ruden, M. I. Nathan

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report on the effects of hydrostatic pressure on an Al _xGa_1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al _xGa_1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

Original language	English (US)
Pages (from-to)	2287-2290
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565155
State	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

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@article{ca10efcd031549a4b727b9f445aaeed9,

title = "AlGaN metal-semiconductor-metal structure for pressure sensing applications",

abstract = "We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.",

author = "Z. Hassan and Lee, {Y. C.} and Ng, {S. S.} and Yam, {F. K.} and Y. Liu and Z. Rang and Kauser, {M. Z.} and Ruden, {P. P.} and Nathan, {M. I.}",

year = "2006",

doi = "10.1002/pssc.200565155",

language = "English (US)",

volume = "3",

pages = "2287--2290",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - AlGaN metal-semiconductor-metal structure for pressure sensing applications

AU - Hassan, Z.

AU - Lee, Y. C.

AU - Ng, S. S.

AU - Yam, F. K.

AU - Liu, Y.

AU - Rang, Z.

AU - Kauser, M. Z.

AU - Ruden, P. P.

AU - Nathan, M. I.

PY - 2006

Y1 - 2006

N2 - We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

AB - We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

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U2 - 10.1002/pssc.200565155

DO - 10.1002/pssc.200565155

M3 - Conference article

AN - SCOPUS:33746354943

SN - 1862-6351

VL - 3

SP - 2287

EP - 2290

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

AlGaN metal-semiconductor-metal structure for pressure sensing applications

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