AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam, Y. Liu, Z. Rang, M. Z. Kauser, P. P. Ruden, M. I. Nathan

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Abstract

We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

Original languageEnglish (US)
Pages (from-to)2287-2290
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - Jul 31 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

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    Hassan, Z., Lee, Y. C., Ng, S. S., Yam, F. K., Liu, Y., Rang, Z., Kauser, M. Z., Ruden, P. P., & Nathan, M. I. (2006). AlGaN metal-semiconductor-metal structure for pressure sensing applications. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 2287-2290. https://doi.org/10.1002/pssc.200565155