We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - Jul 31 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: Aug 28 2005 → Sep 2 2005