AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam, Y. Liu, Z. Rang, M. Z. Kauser, P. P. Ruden, M. I. Nathan

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We report on the effects of hydrostatic pressure on an Al xGa1-xN metal-semiconductor-metal (MSM) structure with Ni Schottky contacts. Structural, optical, and electrical analysis of the Al xGa1-xN film were carried out using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), Raman, UV-visible spectroscopy, and Hall effect measurements. The AlN mole fraction in this film was determined to be about 24%. Current-voltage (I-V) measurements of the MSM structure under hydrostatic pressure indicated a linear decrease of current with pressure. The decrease of the current under pressure was attributed to an increase in barrier height, tentatively attributed to a combination of piezoelectric and band structure effects.

Original languageEnglish (US)
Pages (from-to)2287-2290
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
StatePublished - 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005


Dive into the research topics of 'AlGaN metal-semiconductor-metal structure for pressure sensing applications'. Together they form a unique fingerprint.

Cite this