AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

V. Kalihari; D. J. Ellison; G. Haugstad; C. D. Frisbie

doi:10.1017/S1431927612006162

AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

V. Kalihari
, D. J. Ellison
, G. Haugstad
, C. D. Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	862-863
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
DOIs	https://doi.org/10.1017/S1431927612006162
State	Published - Jul 2012

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10.1017/S1431927612006162

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title = "AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor",

author = "V. Kalihari and Ellison, \{D. J.\} and G. Haugstad and Frisbie, \{C. D.\}",

year = "2012",

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doi = "10.1017/S1431927612006162",

language = "English (US)",

volume = "18",

pages = "862--863",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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T1 - AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

AU - Kalihari, V.

AU - Ellison, D. J.

AU - Haugstad, G.

AU - Frisbie, C. D.

PY - 2012/7

Y1 - 2012/7

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DO - 10.1017/S1431927612006162

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VL - 18

SP - 862

EP - 863

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

ER -

AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

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