AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

V. Kalihari; D. J. Ellison; G. Haugstad; C. D. Frisbie

doi:10.1017/S1431927612006162

AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

V. Kalihari, D. J. Ellison, G. Haugstad, C. D. Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	862-863
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
DOIs	https://doi.org/10.1017/S1431927612006162
State	Published - Jul 2012

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10.1017/S1431927612006162

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title = "AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor",

author = "V. Kalihari and Ellison, {D. J.} and G. Haugstad and Frisbie, {C. D.}",

year = "2012",

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language = "English (US)",

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journal = "Microscopy and Microanalysis",

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AU - Kalihari, V.

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AU - Frisbie, C. D.

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AFM Transverse Shear as a Probe of Crystallinity at the Interface of Gate Insulator and Organic Semiconductor

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