Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors

Kihyon Hong; Yong Hyun Kim; Se Hyun Kim; Wei Xie; Weichao David Xu; Chris H. Kim; C. Daniel Frisbie

doi:10.1002/adma.201401330

Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors

Kihyon Hong, Yong Hyun Kim, Se Hyun Kim, Wei Xie, Weichao David Xu, Chris H. Kim, C. Daniel Frisbie

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	7032-7037
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	41
DOIs	https://doi.org/10.1002/adma.201401330
State	Published - Nov 2014

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10.1002/adma.201401330

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@article{aeced19087654c40a29bb0700682e2da,

title = "Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors",

author = "Kihyon Hong and Kim, \{Yong Hyun\} and Kim, \{Se Hyun\} and Wei Xie and Xu, \{Weichao David\} and Kim, \{Chris H.\} and Frisbie, \{C. Daniel\}",

year = "2014",

month = nov,

doi = "10.1002/adma.201401330",

language = "English (US)",

volume = "26",

pages = "7032--7037",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "41",

}

TY - JOUR

T1 - Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors

AU - Hong, Kihyon

AU - Kim, Yong Hyun

AU - Kim, Se Hyun

AU - Xie, Wei

AU - Xu, Weichao David

AU - Kim, Chris H.

AU - Frisbie, C. Daniel

PY - 2014/11

Y1 - 2014/11

UR - https://www.scopus.com/pages/publications/84915789558

UR - https://www.scopus.com/inward/citedby.url?scp=84915789558&partnerID=8YFLogxK

U2 - 10.1002/adma.201401330

DO - 10.1002/adma.201401330

M3 - Article

AN - SCOPUS:84915789558

SN - 0935-9648

VL - 26

SP - 7032

EP - 7037

JO - Advanced Materials

JF - Advanced Materials

IS - 41

ER -

Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors

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