Aerosol jet printed, Sub-2 v complementary circuits constructed from P-and N-type electrolyte gated transistors

Kihyon Hong, Yong Hyun Kim, Se Hyun Kim, Wei Xie, Weichao David Xu, Chris H. Kim, C. Daniel Frisbie

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

Researchers demonstrate low-voltage complementary circuits based on electrolyte gated transistors (EGTs) fabricated by aerosol jet printing (AJP) of the semiconductor, gel electrolyte, and gate electrode layers onto Si substrates pre-patterned with Au source and drain electrodes. Complementary circuits have been fabricated with the top gate and bottom source and drain (S-D) electrode geometry. A commercial AJP has been employed for printing the poly(3-hexylthiophene) (P3HT) ( p -channel) and ZnO ( n -channel) active layers, the ion gel gate insulator, and the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) gate electrode. Researchers have demonstrated that AJP is an excellent method for additive patterning of various kinds of electronically functional liquid inks.

Original languageEnglish (US)
Pages (from-to)7032-7037
Number of pages6
JournalAdvanced Materials
Volume26
Issue number41
DOIs
StatePublished - Jan 1 2014

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