Aerosol jet printed p- and n-type electrolyte-gated transistors with a variety of electrode materials: Exploring practical routes to printed electronics

Kihyon Hong, Se Hyun Kim, Ankit Mahajan, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Printing electrically functional liquid inks is a promising approach for achieving low-cost, large-area, additive manufacturing of flexible electronic circuits. To print thin-film transistors, a basic building block of thin-film electronics, it is important to have several options for printable electrode materials that exhibit high conductivity, high stability, and low-cost. Here we report completely aerosol jet printed (AJP) p- and n-type electrolyte-gated transistors (EGTs) using a variety of different electrode materials including highly conductive metal nanoparticles (Ag), conducting polymers (polystyrenesulfonate doped poly(3,4-ethylendedioxythiophene, PEDOT:PSS), transparent conducting oxides (indium tin oxide), and carbon-based materials (reduced graphene oxide). Using these source-drain electrode materials and a PEDOT:PSS/ion gel gate stack, we demonstrated all-printed p- and n-type EGTs in combination with poly(3-hexythiophene) and ZnO semiconductors. All transistor components (including electrodes, semiconductors, and gate insulators) were printed by AJP. Both kinds of devices showed typical p- and n-type transistor characteristics, and exhibited both low-threshold voltages (<2 V) and high hole and electron mobilities. Our assessment suggests Ag electrodes may be the best option in terms of overall performance for both types of EGTs.

Original languageEnglish (US)
Pages (from-to)18704-18711
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number21
DOIs
StatePublished - Nov 12 2014

Keywords

  • aerosol jet printing
  • electrode materials
  • electrolyte-gated transistors
  • ion-gel gate insulator

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