Adsorption of TiCl4 and initial stages of Ti growth on Si(001)

T. Mitsui; E. Hill; R. Curtis; E. Ganz

doi:10.1116/1.1351005

Adsorption of TiCl₄ and initial stages of Ti growth on Si(001)

T. Mitsui, E. Hill, R. Curtis, E. Ganz

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The growth of TiCl₄ and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl₄, Ti and Cl, and mobile TiCl₂ on the Si surface are identified at 300 K.

Original language	English (US)
Pages (from-to)	563-567
Number of pages	5
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1351005
State	Published - Mar 2001

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title = "Adsorption of TiCl4 and initial stages of Ti growth on Si(001)",

abstract = "The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.",

author = "T. Mitsui and E. Hill and R. Curtis and E. Ganz",

year = "2001",

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doi = "10.1116/1.1351005",

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AU - Mitsui, T.

AU - Hill, E.

AU - Curtis, R.

AU - Ganz, E.

PY - 2001/3

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N2 - The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.

AB - The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.

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Adsorption of TiCl₄ and initial stages of Ti growth on Si(001)

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