The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|State||Published - Mar 1 2001|