Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films

Abhinav Prakash; Peng Xu; Xuewang Wu; Greg Haugstad; Xiaojia Wang; Bharat Jalan

doi:10.1039/c7tc00190h

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO₃ films

Abhinav Prakash, Peng Xu, Xuewang Wu, Greg Haugstad, Xiaojia Wang, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

High room-Temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnO₃ from other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnO₃ films on SrTiO₃(001) and (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃(001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnO₃ films on SrTiO₃ grown within the growth window yielded a mobility value of 105^cm V^-1 s^-1 at a density, 2.5 × 100cm^-3. Bulk-like thermal conductivity of 13.3 ± 1.46 W m^-1 K^-1 was achieved for stoichiometric films. Both Ba-and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.

Original language	English (US)
Pages (from-to)	5730-5736
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	5
Issue number	23
DOIs	https://doi.org/10.1039/c7tc00190h
State	Published - 2017

Bibliographical note

Funding Information:
Authors would like to thank Tianqi Wang for his help with the MBE schematic. This work was primarily supported by National Science Foundation through DMR-1410888 and in part by UMN MRSEC program under Award Number DMR-1420013. The part of this work (specifically, transport and spectrometry) was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205. Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota which receives partial support from NSF through the MRSEC program. P. X. would also like to acknowledge the support from the UMN Doctoral Dissertation Fellowship

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© The Royal Society of Chemistry 2017.

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10.1039/c7tc00190h

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title = "Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films",

abstract = "High room-Temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnO3 from other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnO3 films on SrTiO3(001) and (La0.3Sr0.7)(Al0.65Ta0.35)O3(001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnO3 films on SrTiO3 grown within the growth window yielded a mobility value of 105cm V-1 s-1 at a density, 2.5 × 100cm-3. Bulk-like thermal conductivity of 13.3 ± 1.46 W m-1 K-1 was achieved for stoichiometric films. Both Ba-and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.",

author = "Abhinav Prakash and Peng Xu and Xuewang Wu and Greg Haugstad and Xiaojia Wang and Bharat Jalan",

note = "Funding Information: Authors would like to thank Tianqi Wang for his help with the MBE schematic. This work was primarily supported by National Science Foundation through DMR-1410888 and in part by UMN MRSEC program under Award Number DMR-1420013. The part of this work (specifically, transport and spectrometry) was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205. Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota which receives partial support from NSF through the MRSEC program. P. X. would also like to acknowledge the support from the UMN Doctoral Dissertation Fellowship Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2017.",

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AU - Haugstad, Greg

AU - Wang, Xiaojia

AU - Jalan, Bharat

N1 - Funding Information: Authors would like to thank Tianqi Wang for his help with the MBE schematic. This work was primarily supported by National Science Foundation through DMR-1410888 and in part by UMN MRSEC program under Award Number DMR-1420013. The part of this work (specifically, transport and spectrometry) was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205. Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota which receives partial support from NSF through the MRSEC program. P. X. would also like to acknowledge the support from the UMN Doctoral Dissertation Fellowship Publisher Copyright: © The Royal Society of Chemistry 2017.

PY - 2017

Y1 - 2017

N2 - High room-Temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnO3 from other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnO3 films on SrTiO3(001) and (La0.3Sr0.7)(Al0.65Ta0.35)O3(001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnO3 films on SrTiO3 grown within the growth window yielded a mobility value of 105cm V-1 s-1 at a density, 2.5 × 100cm-3. Bulk-like thermal conductivity of 13.3 ± 1.46 W m-1 K-1 was achieved for stoichiometric films. Both Ba-and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.

AB - High room-Temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnO3 from other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnO3 films on SrTiO3(001) and (La0.3Sr0.7)(Al0.65Ta0.35)O3(001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnO3 films on SrTiO3 grown within the growth window yielded a mobility value of 105cm V-1 s-1 at a density, 2.5 × 100cm-3. Bulk-like thermal conductivity of 13.3 ± 1.46 W m-1 K-1 was achieved for stoichiometric films. Both Ba-and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.

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Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO₃ films

Abstract

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MRSEC SEED Projects DMR-1420013

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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