Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO
              3
              Films

Anusha kamath Manjeshwar; Sreejith Nair; Anil kumar Rajapitamahuni; Richard d. James; Bharat Jalan

doi:10.1021/acsnano.3c03625

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO 3 Films

Anusha kamath Manjeshwar
, Sreejith Nair
, Anil kumar Rajapitamahuni
, Richard d. James
, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Controlling defect densities in SrRuO₃ films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO₃ films on SrTiO₃ (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ_300K/ρ_2K) of 87 in a 50 nm-thick, coherently strained, and stoichiometric SrRuO₃ film, the highest reported value to date on SrTiO₃ (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO₃ films.

Original language	English (US)
Pages (from-to)	20999-21005
Number of pages	7
Journal	ACS nano
Volume	17
Issue number	21
DOIs	https://doi.org/10.1021/acsnano.3c03625
State	Published - Nov 14 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

adsorption-controlled growth
cation stoichiometry
coercivity
magnetic domains
metal−organic molecular beam epitaxy

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Partial

PubMed: MeSH publication types

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10.1021/acsnano.3c03625

https://pubs.acs.org/doi/10.1021/acsnano.3c03625

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IRG-1: Ionic Control of Materials
Leighton, C. (Leader), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Mkhoyan, A. (Senior Investigator), Walter, J. (Senior Investigator) & Wang, X. (Senior Investigator)
9/1/20 → …
Project: Research project
University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
Leighton, C. (PI) & Lodge, T. (CoI)
THE NATIONAL SCIENCE FOUNDATION
9/1/20 → 8/31/26
Project: Research project

Cite this

@article{e00acc34d154456897f9d80598171889,

title = "Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO 3 Films",

abstract = "Controlling defect densities in SrRuO3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ300K/ρ2K) of 87 in a 50 nm-thick, coherently strained, and stoichiometric SrRuO3 film, the highest reported value to date on SrTiO3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO3 films.",

keywords = "adsorption-controlled growth, cation stoichiometry, coercivity, magnetic domains, metal−organic molecular beam epitaxy",

author = "Manjeshwar, \{Anusha kamath\} and Sreejith Nair and Rajapitamahuni, \{Anil kumar\} and James, \{Richard d.\} and Bharat Jalan",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

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month = nov,

day = "14",

doi = "10.1021/acsnano.3c03625",

language = "English (US)",

volume = "17",

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T1 - Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO 3 Films

AU - Manjeshwar, Anusha kamath

AU - Nair, Sreejith

AU - Rajapitamahuni, Anil kumar

AU - James, Richard d.

AU - Jalan, Bharat

PY - 2023/11/14

Y1 - 2023/11/14

N2 - Controlling defect densities in SrRuO3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ300K/ρ2K) of 87 in a 50 nm-thick, coherently strained, and stoichiometric SrRuO3 film, the highest reported value to date on SrTiO3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO3 films.

AB - Controlling defect densities in SrRuO3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ300K/ρ2K) of 87 in a 50 nm-thick, coherently strained, and stoichiometric SrRuO3 film, the highest reported value to date on SrTiO3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO3 films.

KW - adsorption-controlled growth

KW - cation stoichiometry

KW - coercivity

KW - magnetic domains

KW - metal−organic molecular beam epitaxy

U2 - 10.1021/acsnano.3c03625

DO - 10.1021/acsnano.3c03625

M3 - Article

C2 - 37708240

SN - 1936-0851

VL - 17

SP - 20999

EP - 21005

JO - ACS nano

JF - ACS nano

IS - 21

ER -

Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO 3 Films

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

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Projects

IRG-1: Ionic Control of Materials

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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