Adhesion energy and shape of nanogap InP/InGaAs microcantilevers

Jan D. Makowski; Anand S. Gawarikar; Joseph J. Talghader

doi:10.1109/COMMAD.2006.4429918

Adhesion energy and shape of nanogap InP/InGaAs microcantilevers

Jan D. Makowski, Anand S. Gawarikar, Joseph J. Talghader

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 ± 16 mJm^-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm^-2.

Original language	English (US)
Title of host publication	COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages	212-215
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2006.4429918
State	Published - 2006
Event	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia Duration: Dec 6 2006 → Dec 8 2006

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
Country/Territory	Australia
City	Perth
Period	12/6/06 → 12/8/06

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10.1109/COMMAD.2006.4429918

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Makowski, J. D., Gawarikar, A. S., & Talghader, J. J. (2006). Adhesion energy and shape of nanogap InP/InGaAs microcantilevers. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 212-215). Article 4429918 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2006.4429918

Adhesion energy and shape of nanogap InP/InGaAs microcantilevers. / Makowski, Jan D.; Gawarikar, Anand S.; Talghader, Joseph J.
COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 212-215 4429918 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Makowski, JD, Gawarikar, AS & Talghader, JJ 2006, Adhesion energy and shape of nanogap InP/InGaAs microcantilevers. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices., 4429918, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 212-215, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 12/6/06. https://doi.org/10.1109/COMMAD.2006.4429918

Makowski JD, Gawarikar AS, Talghader JJ. Adhesion energy and shape of nanogap InP/InGaAs microcantilevers. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 212-215. 4429918. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2006.4429918

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title = "Adhesion energy and shape of nanogap InP/InGaAs microcantilevers",

abstract = "The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 ± 16 mJm-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm-2.",

author = "Makowski, {Jan D.} and Gawarikar, {Anand S.} and Talghader, {Joseph J.}",

year = "2006",

doi = "10.1109/COMMAD.2006.4429918",

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isbn = "1424405785",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "212--215",

booktitle = "COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices",

note = "2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 ; Conference date: 06-12-2006 Through 08-12-2006",

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N2 - The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 ± 16 mJm-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm-2.

AB - The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 120 nm airgap in a InP/InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72 ± 16 mJm-2. Since the airgap is much smaller than has been measured previously, the influence of van-der-Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25 mJm-2.

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BT - COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

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Adhesion energy and shape of nanogap InP/InGaAs microcantilevers

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