Insulated gate bipolar transistor(IGBT)is one of the hot topics in microelectronics research. The related circuit simulation urgentlyneeds the equivalent model of the device. The physical model of the 1200V field-stop IGBT solving ambipolar diffusion equation(ADE)based on the Fourier transformis proposed in this paper. The ADE is solved accurately by the distribution of carriers in equivalent drift region of the RC circuit. The model is based on the working principle of high-power IGBT. The high-level injection hypothesis is used. The complex effect of the 1200V field-stop IGBT is considered according to the characteristics of the 1200V field-stop IGBT. After extracting the key parameters of the model, the simulation results are verified by the actual measurement results. The average error of simulation and experiment is less than 8%. The accuracy of the model and parameter extraction method is proved by analyzing the static and turn-off transient characteristics.
|Translated title of the contribution||ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor|
|Number of pages||6|
|Journal||Tien Tzu Hsueh Pao/Acta Electronica Sinica|
|State||Published - Feb 1 2019|
- Ambipolar diffusion equation
- Field stop insulated gate bipolar transistor
- Physical model