Active space division switch fabrics using semiconductor optical amplifiers

S. Kim, Anand Gopinath

Research output: Contribution to journalConference articlepeer-review

Abstract

The partial screening in strain InGaAsP based quantum well (QW) grown on (111) substrate and its gain spectrum under current injection is studied. The calculated gain spectra shows blueshift of the gain peak as the carrier density increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

Original languageEnglish (US)
Pages (from-to)202-203
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - 1997
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

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