The partial screening in strain InGaAsP based quantum well (QW) grown on (111) substrate and its gain spectrum under current injection is studied. The calculated gain spectra shows blueshift of the gain peak as the carrier density increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Dec 1 1997|