Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

W. Knap; E. Borovitskaya; M. S. Shur; L. Hsu; W. Walukiewicz; E. Frayssinet; P. Lorenzini; N. Grandjean; C. Skierbiszewski; P. Prystawko; M. Leszczynski; I. Grzegory

doi:10.1063/1.1448401

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

W. Knap, E. Borovitskaya, M. S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory

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Abstract

We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be a_c=9.1±0.7eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures.

Original language	English (US)
Pages (from-to)	1228-1230
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1448401
State	Published - Feb 18 2002

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10.1063/1.1448401

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title = "Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures",

abstract = "We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be ac=9.1±0.7eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures.",

author = "W. Knap and E. Borovitskaya and Shur, \{M. S.\} and L. Hsu and W. Walukiewicz and E. Frayssinet and P. Lorenzini and N. Grandjean and C. Skierbiszewski and P. Prystawko and M. Leszczynski and I. Grzegory",

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doi = "10.1063/1.1448401",

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TY - JOUR

T1 - Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

AU - Knap, W.

AU - Borovitskaya, E.

AU - Shur, M. S.

AU - Hsu, L.

AU - Walukiewicz, W.

AU - Frayssinet, E.

AU - Lorenzini, P.

AU - Grandjean, N.

AU - Skierbiszewski, C.

AU - Prystawko, P.

AU - Leszczynski, M.

AU - Grzegory, I.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be ac=9.1±0.7eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures.

AB - We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be ac=9.1±0.7eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures.

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U2 - 10.1063/1.1448401

DO - 10.1063/1.1448401

M3 - Article

AN - SCOPUS:79956055905

SN - 0003-6951

VL - 80

SP - 1228

EP - 1230

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

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