Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors

S. Lee, A. Gopinath, S. J. Pachuta

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 ʯ 1019cm-3of AIGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AIxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.

Original languageEnglish (US)
Pages (from-to)1551-1553
Number of pages3
JournalElectronics Letters
Volume27
Issue number17
DOIs
StatePublished - May 9 1991

Keywords

  • Bipolar devices
  • Semiconductor devices and materials
  • Transistors

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