Acceptor impurity states and their consequences for optical properties of GaAs doping superlattices

John D. Bruno, P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, we examine two features of acceptor states in GaAs doping superlattices. First, we consider how the finite size of acceptor state wavefunctions affects optical matrix elements and below-gap luminescence spectra. Next, we examine the finite width of the acceptor band caused by potential fluctuations associated with the random configuration of charged impurities in the system and discuss the impact of this width on luminescence.

Original languageEnglish (US)
Pages (from-to)50-58
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume792
DOIs
StatePublished - Aug 11 1987

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