Accelerated BTI degradation under stochastic TDDB effect

Devyani Patra, Ahmed Kamal Reza, Mehdi Katoozi, Ethan H. Cannon, Kaushik Roy, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. This work confirms the correlation with 28nm measurement data. Based on stochastic trapping/detrapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. The contributions of this work include: (1) Derivation of BTI models with added TDDB impact, (2) Providing test results for calibration of model parameters, and (3) Presenting device models and simulation results for circuits. At circuit level, incorporating these models illustrates a significant increase in failure rate due to accelerated BTI.

Original languageEnglish (US)
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538654798
StatePublished - May 25 2018
Externally publishedYes
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: Mar 11 2018Mar 15 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2018 IEEE.


  • Accelerated aging
  • BTI
  • TDDB
  • Trapping/detrapping
  • circuit simulation


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