Accelerated BTI degradation under stochastic TDDB effect

Devyani Patra; Ahmed Kamal Reza; Mehdi Katoozi; Ethan H. Cannon; Kaushik Roy; Yu Cao

doi:10.1109/IRPS.2018.8353616

Accelerated BTI degradation under stochastic TDDB effect

Devyani Patra, Ahmed Kamal Reza, Mehdi Katoozi, Ethan H. Cannon, Kaushik Roy, Yu Cao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. This work confirms the correlation with 28nm measurement data. Based on stochastic trapping/detrapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. The contributions of this work include: (1) Derivation of BTI models with added TDDB impact, (2) Providing test results for calibration of model parameters, and (3) Presenting device models and simulation results for circuits. At circuit level, incorporating these models illustrates a significant increase in failure rate due to accelerated BTI.

Original language	English (US)
Title of host publication	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5C.51-5C.54
ISBN (Electronic)	9781538654798
DOIs	https://doi.org/10.1109/IRPS.2018.8353616
State	Published - May 25 2018
Externally published	Yes
Event	2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States Duration: Mar 11 2018 → Mar 15 2018

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2018-March
ISSN (Print)	1541-7026

Other

Other	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/Territory	United States
City	Burlingame
Period	3/11/18 → 3/15/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Accelerated aging
BTI
TDDB
Trapping/detrapping
circuit simulation

Publisher link

10.1109/IRPS.2018.8353616

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Cite this

Patra, D., Reza, A. K., Katoozi, M., Cannon, E. H., Roy, K., & Cao, Y. (2018). Accelerated BTI degradation under stochastic TDDB effect. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. 5C.51-5C.54). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353616

Accelerated BTI degradation under stochastic TDDB effect. / Patra, Devyani; Reza, Ahmed Kamal; Katoozi, Mehdi et al.
2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 5C.51-5C.54 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Patra, D, Reza, AK, Katoozi, M, Cannon, EH, Roy, K & Cao, Y 2018, Accelerated BTI degradation under stochastic TDDB effect. in 2018 IEEE International Reliability Physics Symposium, IRPS 2018. IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 5C.51-5C.54, 2018 IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, United States, 3/11/18. https://doi.org/10.1109/IRPS.2018.8353616

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abstract = "The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. This work confirms the correlation with 28nm measurement data. Based on stochastic trapping/detrapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. The contributions of this work include: (1) Derivation of BTI models with added TDDB impact, (2) Providing test results for calibration of model parameters, and (3) Presenting device models and simulation results for circuits. At circuit level, incorporating these models illustrates a significant increase in failure rate due to accelerated BTI.",

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Accelerated BTI degradation under stochastic TDDB effect

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