Ab initio study of ferromagnetic semiconductor Ge1-xMn xTe

Z. Xie, W. D. Cheng, D. S. Wu, Y. Z. Lan, Shuping Huang, J. M. Hu, J. Shen

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Abstract

First-principles calculations are made on the Ge1-xMn xTe diluted magnetic semiconductors with different compositions. The origin of their ferromagnetism is investigated and the carrier-induced ferromagnetism is developed for these diluted magnetic semiconductors. The Mn 3dstates localized with divalent character are deep below the Fermi level, and the carriers introduced by defects are supported in our calculation. The pstates of Ge also play an important role in the occurrence of ferromagnetism especially at high temperature. It is thought that Ge1-xMn xTe with a moderate composition (x ≤ 0.51) of Mn atoms is a good candidate for DMS materials.

Original languageEnglish (US)
Article number012
Pages (from-to)7171-7178
Number of pages8
JournalJournal of Physics Condensed Matter
Volume18
Issue number31
DOIs
StatePublished - Aug 9 2006

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    Xie, Z., Cheng, W. D., Wu, D. S., Lan, Y. Z., Huang, S., Hu, J. M., & Shen, J. (2006). Ab initio study of ferromagnetic semiconductor Ge1-xMn xTe. Journal of Physics Condensed Matter, 18(31), 7171-7178. [012]. https://doi.org/10.1088/0953-8984/18/31/012