Ab-initio simulation of van der Waals MoTe2-SnS2 heterotunneling FETs for low-power electronics

Aron Szabo, Steven J. Koester, Mathieu Luisier

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a firstprinciples basis. At a supply voltage Vdd = 0.4 V and OFF-current IOFF = 10<sup>-6</sup> μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.

Original languageEnglish (US)
Article number7055249
Pages (from-to)514-516
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number5
DOIs
StatePublished - May 1 2015

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • Device simulation
  • tunnel-FET

How much support was provided by MRSEC?

  • Partial

Fingerprint

Dive into the research topics of 'Ab-initio simulation of van der Waals MoTe2-SnS2 heterotunneling FETs for low-power electronics'. Together they form a unique fingerprint.

Cite this