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Abstract
Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a firstprinciples basis. At a supply voltage Vdd = 0.4 V and OFF-current IOFF = 10<sup>-6</sup> μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.
Original language | English (US) |
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Article number | 7055249 |
Pages (from-to) | 514-516 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 5 |
DOIs | |
State | Published - May 1 2015 |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
Keywords
- Device simulation
- tunnel-FET
MRSEC Support
- Partial
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- 2 Finished
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University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project