Projects per year
Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a firstprinciples basis. At a supply voltage Vdd = 0.4 V and OFF-current IOFF = 10<sup>-6</sup> μA/μm, ON-state currents >75 μA/μm are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.
- Device simulation
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 1