A variable temperature x-ray photoelectron spectroscopic study of the surface conversion of diethylaluminum azide to AIN

R. K. Schulze, D. C. Boyd, John F Evans, Wayne L Gladfelter

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Abstract

Variable temperature x-ray photoelectron spectroscopy was used to study the thermal reaction of condensed thin films of diethyialuminum azide, yielding AIN. This precursor has been shown to be a useful chemical vapor deposition (CVD) reagent for the preparation of AIN thin films by a thermally assisted CVD process. Reaction progress was monitored easily with x-ray photoelectron spectroscopy (XPS) due to the chemical uniqueness and thus the spectral uniqueness of the various functionalities in the molecule. The results are consistent with a mechanism proposed in other studies. They indicate commencement of the surface reaction at about 300 °C and formation of AIN at temperatures above 500 °C. Activation of the diethyialuminum azide by various means causes the elimination of molecular nitrogen concomitant with the formation of an intermediate which is suggested to be a nitrene radical. This intermediate is found to have a high desorption energy, and, its subsequent reaction to yield AIN is confined to the surface.

Original languageEnglish (US)
Pages (from-to)2338-2343
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number3
DOIs
StatePublished - May 1990

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