Variable temperature x-ray photoelectron spectroscopy was used to study the thermal reaction of condensed thin films of diethyialuminum azide, yielding AIN. This precursor has been shown to be a useful chemical vapor deposition (CVD) reagent for the preparation of AIN thin films by a thermally assisted CVD process. Reaction progress was monitored easily with x-ray photoelectron spectroscopy (XPS) due to the chemical uniqueness and thus the spectral uniqueness of the various functionalities in the molecule. The results are consistent with a mechanism proposed in other studies. They indicate commencement of the surface reaction at about 300 °C and formation of AIN at temperatures above 500 °C. Activation of the diethyialuminum azide by various means causes the elimination of molecular nitrogen concomitant with the formation of an intermediate which is suggested to be a nitrene radical. This intermediate is found to have a high desorption energy, and, its subsequent reaction to yield AIN is confined to the surface.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - May 1990|