A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, S. A. Campbell

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HfxTi1-xO2 films have been deposited by chemical vapor deposition. Permittivities of approximately 50 have been obtained. The films are stable up to 1000 °C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities are comparable to those obtained when using pure HfO2.

Original languageEnglish (US)
Pages (from-to)263-266
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Apr 2004
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: Jun 18 2003Jun 20 2003

Bibliographical note

Funding Information:
Films of Hf x Ti 1−x O 2 were deposited on silicon from their respective nitrato sources. The layers had permittivities of up to 50. The films crystallized upon annealing at 700 °C and were thermally stable up to 1000 °C. The flatband voltage was largely independent of composition and annealing conditions, as was the hysteresis. This suggests that little reaction is occurring between the TiO 2 and the substrate silicon. Transistors made from these stacks showed mobilities comparable to pure HfO 2 control devices. The authors gratefully acknowledge the support of SRC, contract #859.


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