A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

Saptarshi Das, Wei Zhang, Laxman Raju Thoutam, Zhili Xiao, Axel Hoffmann, Marcel Demarteau, Andreas Roelofs

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.

Original languageEnglish (US)
Article number7084130
Pages (from-to)621-623
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number6
DOIs
StatePublished - Jun 1 2015

Keywords

  • Amplifier
  • Black Phosphorus
  • Field Effect Transistor
  • Frequency Response
  • Gain

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