Skip to main navigation
Skip to search
Skip to main content
Experts@Minnesota Home
Home
Profiles
Research units
University Assets
Projects and Grants
Research output
Datasets
Press/Media
Activities
Fellowships, Honors, and Prizes
Impacts
Search by expertise, name or affiliation
A simple method for growing V
3
Si single crystals
T. Callaghan
, J. Schwanebeck
, L. Toth
, M. Dayan
, A. M. Goldman
Physics and Astronomy (Twin Cities)
Research output
:
Contribution to journal
›
Article
›
peer-review
6
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'A simple method for growing V
3
Si single crystals'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Single Crystal
100%
V3Si
100%
Martensitic Transformation
50%
Superconducting Transition Temperature
50%
Low Oxygen Content
50%
Electron Beam Melting
50%
Resistivity Ratio
50%
Engineering
Simple Procedure
100%
Resistivity Ratio
100%
Oxygen Content
100%
Electron Beam Melting
100%
Material Science
Electrical Resistivity
100%
Single Crystal
100%