A simple method for growing V3Si single crystals

T. Callaghan; J. Schwanebeck; L. Toth; M. Dayan; A. M. Goldman

doi:10.1063/1.325104

A simple method for growing V₃Si single crystals

T. Callaghan
, J. Schwanebeck
, L. Toth
, M. Dayan
, A. M. Goldman

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

V₃Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

Original language	English (US)
Pages (from-to)	2523-2525
Number of pages	3
Journal	Journal of Applied Physics
Volume	49
Issue number	4
DOIs	https://doi.org/10.1063/1.325104
State	Published - 1978

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10.1063/1.325104

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title = "A simple method for growing V3Si single crystals",

abstract = "V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.",

author = "T. Callaghan and J. Schwanebeck and L. Toth and M. Dayan and Goldman, \{A. M.\}",

year = "1978",

doi = "10.1063/1.325104",

language = "English (US)",

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pages = "2523--2525",

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T1 - A simple method for growing V3Si single crystals

AU - Callaghan, T.

AU - Schwanebeck, J.

AU - Toth, L.

AU - Dayan, M.

AU - Goldman, A. M.

PY - 1978

Y1 - 1978

N2 - V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

AB - V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

UR - https://www.scopus.com/pages/publications/0017958283

UR - https://www.scopus.com/pages/publications/0017958283#tab=citedBy

U2 - 10.1063/1.325104

DO - 10.1063/1.325104

M3 - Article

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SN - 0021-8979

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EP - 2525

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

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