A simple method for growing V3Si single crystals

T. Callaghan; J. Schwanebeck; L. Toth; M. Dayan; A. M. Goldman

doi:10.1063/1.325104

A simple method for growing V₃Si single crystals

T. Callaghan, J. Schwanebeck, L. Toth, M. Dayan, A. M. Goldman

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

V₃Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

Original language	English (US)
Pages (from-to)	2523-2525
Number of pages	3
Journal	Journal of Applied Physics
Volume	49
Issue number	4
DOIs	https://doi.org/10.1063/1.325104
State	Published - 1978

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10.1063/1.325104

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title = "A simple method for growing V3Si single crystals",

abstract = "V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.",

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year = "1978",

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AU - Schwanebeck, J.

AU - Toth, L.

AU - Dayan, M.

AU - Goldman, A. M.

PY - 1978

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AB - V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

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