A simple method for growing V3Si single crystals

T. Callaghan, J. Schwanebeck, L. Toth, M. Dayan, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

Original languageEnglish (US)
Pages (from-to)2523-2525
Number of pages3
JournalJournal of Applied Physics
Issue number4
StatePublished - 1978


Dive into the research topics of 'A simple method for growing V3Si single crystals'. Together they form a unique fingerprint.

Cite this