A simple method for growing V3Si single crystals

T. Callaghan, J. Schwanebeck, L. Toth, M. Dayan, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

Original languageEnglish (US)
Pages (from-to)2523-2525
Number of pages3
JournalJournal of Applied Physics
Volume49
Issue number4
DOIs
StatePublished - Dec 1 1978

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