A sharp interface model of intermediate-phase growth under the influence of electromigration

Peng Zhou, William C. Johnson, Perry H. Leo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A sharp interface model has been developed to model intermediate-phase growth under the influence of electromigration in a binary system. Simulation results show that the phase growth rate depends on both the magnitude and the direction of the applied current. With the current density fixed, at early times, there is a parabolic growth behavior for the intermediate phase, while at longer times, there is a linear phase growth behavior when the electron flow aids diffusion of atoms; however, a limiting thickness is found when the electron flow hinders diffusion. Qualitative analysis shows that the longer time behavior also holds in a binary system with multiple intermediate phases present.

Original languageEnglish (US)
Pages (from-to)1876-1883
Number of pages8
JournalJournal of Electronic Materials
Volume40
Issue number9
DOIs
StatePublished - Sep 1 2011

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Electromigration
electromigration
Electrons
qualitative analysis
Current density
Atoms
electrons
current density
atoms
simulation

Keywords

  • Intermediate-phase growth
  • electromigration
  • sharp interface model

Cite this

A sharp interface model of intermediate-phase growth under the influence of electromigration. / Zhou, Peng; Johnson, William C.; Leo, Perry H.

In: Journal of Electronic Materials, Vol. 40, No. 9, 01.09.2011, p. 1876-1883.

Research output: Contribution to journalArticle

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