A semiclassical study of carrier transport combined with atomistic calculation of subbands in carbon nanoribbon transistors

D. Rondoni, J. Hoekstra, M. Lenzi, R. Grassi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper we present a deterministic approach to the study of one-dimensional carrier transport in CNR devices, both in the ballistic regime and when phonon scattering is taken into account. The energy subbands and the potential energy profiles along the longitudinal coordinate are obtained through the atomistic slabby-slab solution of the transverse Schrödinger equation. The longitudinal transport is modeled through a deterministic solution of the Boltzmann transport equation. Finally, these equations are solved self-consistently with the Poisson equation in order to obtain the electrostatic potential, the charge density and the electrical currents at different biases. Results are presented for different channel widths and transistor geometries and the impact of phonon scattering is discussed.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Pages643-646
Number of pages4
StatePublished - Oct 3 2008
Event2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
Duration: Jun 1 2008Jun 5 2008

Publication series

NameTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Volume3

Other

Other2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
CountryUnited States
CityQuebec City, QC
Period6/1/086/5/08

Keywords

  • Boltzmann equation
  • Carbon nanoribbons
  • Carrier transport
  • Phonon scattering

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