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Abstract: Much progress has been made in the area of wide bandgap semiconductors for applications in electronics and optoelectronics such as displays, power electronics, and solar cells. New materials are being sought after and considerable attention has been given to complex oxides, specifically those with the perovskite crystal structure. Molecular-beam epitaxy (MBE) has come to the forefront of this field for the thin film synthesis of these materials in a high-quality manner and achieves some of their best figures of merit. Here, we discuss the development of MBE from its beginnings as a method for III–V semiconductor growth to today for the growth of many contenders for next-generation electronics. Comparing MBE with other physical vapor deposition techniques, we identify the advantages of MBE as well as many of the challenges that still must be overcome should this technique be applied to other up-and-coming wide bandgap complex oxide semiconductors. Graphic abstract: [Figure not available: see fulltext.]
Bibliographical noteFunding Information:
The authors thank Scott Chambers for helpful discussion and proof-reading. We also thank Justin Ramberger and Javier Garcia Barriocanal for their helpful discussion regarding electron-beam evaporation and ozone MBE, respectively. This review paper acknowledges support from the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-19-1-0245 and FA9550-21-1-0025 and through NSF DMR-1741801. We also acknowledge support from the U.S. Department of Energy through DE-SC002021 and the University of Minnesota Center for Quantum Materials, under Award No. DE-SC0016371. The work also benefitted from the Norwegian Centennial Chair Program (NOCC) and Vannevar Bush Faculty Fellowship and the UMN MRSEC program under Award No. DMR- 2011401. W.N. thanks support from the UMN doctoral dissertation fellowship.
© 2021, The Author(s), under exclusive licence to The Materials Research Society.
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- 2 Active
9/1/20 → 8/31/26
Project: Research project