A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy

R. Held, B. E. Ishaug, A. Parkhomovsky, A. M. Dabiran, P. I. Cohen

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

GaN(0001) films were grown by molecular beam epitaxy using ammonia and elemental Ga. The surface reactivity and growth kinetics of GaN(0001) were investigated as a function of growth parameters using desorption mass spectroscopy. Growth proceeds either by island nucleation or by step flow, depending on the steady state surface coverage of Ga. Three Ga adsorption states were found on the surface, one chemisorption and two weak states. One of the weak states corresponds to Ga adsorbed on a gallided surface, while the other corresponded to an intrinsic physisorption state on a hydrogen-passivated, nitrided surface. An abrupt growth mode transition between excess Ga and excess nitrogen was found as a function of growth parameters. The transition was modeled by rate equations based on growth at step edges and the three types of adsorption states.

Original languageEnglish (US)
Pages (from-to)1219-1226
Number of pages8
JournalJournal of Applied Physics
Volume87
Issue number3
DOIs
StatePublished - Feb 2000

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