A pure single-walled carbon nanotube thin film based three-terminal microelectromechanical switch

Min Woo Jang; Chia Ling Chen; Walter E. Partlo; Shruti R. Patil; Dongjin Lee; Zhijang Ye; David Lilja; T. Andrew Taton; Tianhong Cui; Stephen A. Campbell

doi:10.1063/1.3553227

A pure single-walled carbon nanotube thin film based three-terminal microelectromechanical switch

Min Woo Jang, Chia Ling Chen, Walter E. Partlo, Shruti R. Patil, Dongjin Lee, Zhijang Ye, David Lilja, T. Andrew Taton, Tianhong Cui, Stephen A. Campbell

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a layer-by-layer-self-assembly process are discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19× 10^-3ω cm after thermal treatment processes were performed. The estimated specific contact resistance to gold electrodes was 6.33× 10^-9 ωm ² from contact chain measurements. The fabricated three-terminal microelectromechanical switch using these films functioned as a beam for multiple switching cycles with a 4.5 V pull-in voltage. This switch is believed to be a promising device for low power digital logic applications.

Original language	English (US)
Article number	073502
Journal	Applied Physics Letters
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.3553227
State	Published - Feb 14 2011

Bibliographical note

Funding Information:
This work was partially supported by the DARPA NEMS Program. We also acknowledge the fabrication and characterization assistance at the Nanofabrication Center and the Characterization Facility at the University of Minnesota, which are supported by NSF through NNIN.

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

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10.1063/1.3553227

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title = "A pure single-walled carbon nanotube thin film based three-terminal microelectromechanical switch",

abstract = "The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a layer-by-layer-self-assembly process are discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19× 10-3ω cm after thermal treatment processes were performed. The estimated specific contact resistance to gold electrodes was 6.33× 10-9 ωm 2 from contact chain measurements. The fabricated three-terminal microelectromechanical switch using these films functioned as a beam for multiple switching cycles with a 4.5 V pull-in voltage. This switch is believed to be a promising device for low power digital logic applications.",

author = "Jang, {Min Woo} and Chen, {Chia Ling} and Partlo, {Walter E.} and Patil, {Shruti R.} and Dongjin Lee and Zhijang Ye and David Lilja and Taton, {T. Andrew} and Tianhong Cui and Campbell, {Stephen A.}",

note = "Funding Information: This work was partially supported by the DARPA NEMS Program. We also acknowledge the fabrication and characterization assistance at the Nanofabrication Center and the Characterization Facility at the University of Minnesota, which are supported by NSF through NNIN. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Jang, Min Woo

AU - Chen, Chia Ling

AU - Partlo, Walter E.

AU - Patil, Shruti R.

AU - Lee, Dongjin

AU - Ye, Zhijang

AU - Lilja, David

AU - Taton, T. Andrew

AU - Cui, Tianhong

AU - Campbell, Stephen A.

N1 - Funding Information: This work was partially supported by the DARPA NEMS Program. We also acknowledge the fabrication and characterization assistance at the Nanofabrication Center and the Characterization Facility at the University of Minnesota, which are supported by NSF through NNIN. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/2/14

Y1 - 2011/2/14

N2 - The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a layer-by-layer-self-assembly process are discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19× 10-3ω cm after thermal treatment processes were performed. The estimated specific contact resistance to gold electrodes was 6.33× 10-9 ωm 2 from contact chain measurements. The fabricated three-terminal microelectromechanical switch using these films functioned as a beam for multiple switching cycles with a 4.5 V pull-in voltage. This switch is believed to be a promising device for low power digital logic applications.

AB - The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a layer-by-layer-self-assembly process are discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19× 10-3ω cm after thermal treatment processes were performed. The estimated specific contact resistance to gold electrodes was 6.33× 10-9 ωm 2 from contact chain measurements. The fabricated three-terminal microelectromechanical switch using these films functioned as a beam for multiple switching cycles with a 4.5 V pull-in voltage. This switch is believed to be a promising device for low power digital logic applications.

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A pure single-walled carbon nanotube thin film based three-terminal microelectromechanical switch

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