A physical interpretation of the Hall effect in amorphous semiconductors

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Abstract

We propose that the Hall effect sign anomaly in amorphous semiconductors can be understood as a destructive interference effect when the electronic phase coherence length which characterizes transport is comparable to the distance between transport states.

Original languageEnglish (US)
Pages (from-to)372-374
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989

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