Abstract
We propose that the Hall effect sign anomaly in amorphous semiconductors can be understood as a destructive interference effect when the electronic phase coherence length which characterizes transport is comparable to the distance between transport states.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 372-374 |
| Number of pages | 3 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 114 |
| Issue number | PART 1 |
| DOIs | |
| State | Published - Dec 1 1989 |