Abstract
The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting current-voltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given current-voltage curve are presented. What a picture is worth: The operation of an ambipolar field-effect transistor (FET) is described graphically, based on a simple diagram depicting the gate voltage-channel potential profile relative to the injection threshold voltage of charge carriers.
Original language | English (US) |
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Pages (from-to) | 1547-1552 |
Number of pages | 6 |
Journal | ChemPhysChem |
Volume | 14 |
Issue number | 8 |
DOIs | |
State | Published - Jun 3 2013 |
Keywords
- ambipolar field-effect transistors
- channel potential
- charge carriers
- current-voltage characteristics
- transistor operation regime