TY - GEN
T1 - A non-thermal plasma reactor for the synthesis of Gallium Nitride nanocrystals
AU - Anthony, R.
AU - Thimsen, E.
AU - Johnson, J.
AU - Campbell, S.
AU - Kortshagen, U.
PY - 2006/5/15
Y1 - 2006/5/15
N2 - Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline powders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.
AB - Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline powders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.
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M3 - Conference contribution
AN - SCOPUS:33646414807
SN - 1558998462
SN - 9781558998469
T3 - Materials Research Society Symposium Proceedings
SP - 221
EP - 224
BT - Materials Research Society Symposium Proceedings
T2 - 2005 Materials Research Society Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -