A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS

Saurabh Chaubey; Ramesh Harjani

doi:10.1109/CICC.2019.8780265

A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS

Saurabh Chaubey
, Ramesh Harjani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We present a multi-mode DC-DC converter that directly takes the output of a Li-ion battery and converts it to on-chip voltages suitable for integrated electronics. The design in standard 65nm CMOS converts the Li-ion battery voltage that can vary between 4.2V to 2.8V directly to a internal V-{DD voltage that ranges between 1.5V to 0.3V. The 65nm design safely handles the high voltage delivery while providing conversion ratios between 1 to 13. To maintain high efficiency throughout, the proposed DC-DC converter functions in three distinct modes resonant, soft-switching and four-level-buck. We use a bond wire inductor (≈ 11 nH) as the high Q passive for all three modes. The design uses core devices only. The converter handles load currents between 0.5-200mA (400X), achieves a peak efficiency of 86.6% and has a peak power density of 0.3W/mm². The prototype was fabricated in TSMC's 65nm GP CMOS.

Original language	English (US)
Title of host publication	2019 IEEE Custom Integrated Circuits Conference, CICC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538693957
DOIs	https://doi.org/10.1109/CICC.2019.8780265
State	Published - Apr 2019
Event	40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019 - Austin, United States Duration: Apr 14 2019 → Apr 17 2019

Publication series

Name	Proceedings of the Custom Integrated Circuits Conference
Volume	2019-April
ISSN (Print)	0886-5930

Conference

Conference	40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019
Country/Territory	United States
City	Austin
Period	4/14/19 → 4/17/19

Bibliographical note

Funding Information:
VI. ACKNOWLEDGMENTS This work was supported by SRC task ID 2712.008.

Publisher Copyright:
© 2019 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/CICC.2019.8780265

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Chaubey, S., & Harjani, R. (2019). A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS. In 2019 IEEE Custom Integrated Circuits Conference, CICC 2019 Article 8780265 (Proceedings of the Custom Integrated Circuits Conference; Vol. 2019-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CICC.2019.8780265

A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS. / Chaubey, Saurabh; Harjani, Ramesh.
2019 IEEE Custom Integrated Circuits Conference, CICC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8780265 (Proceedings of the Custom Integrated Circuits Conference; Vol. 2019-April).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chaubey, S & Harjani, R 2019, A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS. in 2019 IEEE Custom Integrated Circuits Conference, CICC 2019., 8780265, Proceedings of the Custom Integrated Circuits Conference, vol. 2019-April, Institute of Electrical and Electronics Engineers Inc., 40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019, Austin, United States, 4/14/19. https://doi.org/10.1109/CICC.2019.8780265

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abstract = "We present a multi-mode DC-DC converter that directly takes the output of a Li-ion battery and converts it to on-chip voltages suitable for integrated electronics. The design in standard 65nm CMOS converts the Li-ion battery voltage that can vary between 4.2V to 2.8V directly to a internal V-\{DD voltage that ranges between 1.5V to 0.3V. The 65nm design safely handles the high voltage delivery while providing conversion ratios between 1 to 13. To maintain high efficiency throughout, the proposed DC-DC converter functions in three distinct modes resonant, soft-switching and four-level-buck. We use a bond wire inductor (≈ 11 nH) as the high Q passive for all three modes. The design uses core devices only. The converter handles load currents between 0.5-200mA (400X), achieves a peak efficiency of 86.6\% and has a peak power density of 0.3W/mm2. The prototype was fabricated in TSMC's 65nm GP CMOS.",

author = "Saurabh Chaubey and Ramesh Harjani",

note = "Funding Information: VI. ACKNOWLEDGMENTS This work was supported by SRC task ID 2712.008. Publisher Copyright: {\textcopyright} 2019 IEEE.; 40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019 ; Conference date: 14-04-2019 Through 17-04-2019",

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N2 - We present a multi-mode DC-DC converter that directly takes the output of a Li-ion battery and converts it to on-chip voltages suitable for integrated electronics. The design in standard 65nm CMOS converts the Li-ion battery voltage that can vary between 4.2V to 2.8V directly to a internal V-{DD voltage that ranges between 1.5V to 0.3V. The 65nm design safely handles the high voltage delivery while providing conversion ratios between 1 to 13. To maintain high efficiency throughout, the proposed DC-DC converter functions in three distinct modes resonant, soft-switching and four-level-buck. We use a bond wire inductor (≈ 11 nH) as the high Q passive for all three modes. The design uses core devices only. The converter handles load currents between 0.5-200mA (400X), achieves a peak efficiency of 86.6% and has a peak power density of 0.3W/mm2. The prototype was fabricated in TSMC's 65nm GP CMOS.

AB - We present a multi-mode DC-DC converter that directly takes the output of a Li-ion battery and converts it to on-chip voltages suitable for integrated electronics. The design in standard 65nm CMOS converts the Li-ion battery voltage that can vary between 4.2V to 2.8V directly to a internal V-{DD voltage that ranges between 1.5V to 0.3V. The 65nm design safely handles the high voltage delivery while providing conversion ratios between 1 to 13. To maintain high efficiency throughout, the proposed DC-DC converter functions in three distinct modes resonant, soft-switching and four-level-buck. We use a bond wire inductor (≈ 11 nH) as the high Q passive for all three modes. The design uses core devices only. The converter handles load currents between 0.5-200mA (400X), achieves a peak efficiency of 86.6% and has a peak power density of 0.3W/mm2. The prototype was fabricated in TSMC's 65nm GP CMOS.

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A Multi-Mode DC-DC Converter for Direct Battery-to-Silicon High Tension Power Delivery in 65nm CMOS

Abstract

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