A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

Marco Battaglia; Dario Bisello; Devis Contarato; Peter Denes; Piero Giubilato; Lindsay Glesener; Chinh Vu

doi:10.1016/j.nima.2007.09.042

A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

Marco Battaglia
, Dario Bisello
, Devis Contarato
, Peter Denes
, Piero Giubilato
, Lindsay Glesener
, Chinh Vu

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m² pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e^- beam at the LBNL ALS.

Original language	English (US)
Pages (from-to)	526-528
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	583
Issue number	2-3
DOIs	https://doi.org/10.1016/j.nima.2007.09.042
State	Published - Dec 21 2007

Bibliographical note

Funding Information:
This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine.

Keywords

CMOS technology
Monolithic pixel sensor
Particle detection
SOI

Publisher link

10.1016/j.nima.2007.09.042

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A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology. / Battaglia, Marco; Bisello, Dario; Contarato, Devis et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 583, No. 2-3, 21.12.2007, p. 526-528.

Research output: Contribution to journal › Article › peer-review

@article{f7e1fe60e9d34b5d96a7d7930986dc63,

title = "A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology",

abstract = "This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.",

keywords = "CMOS technology, Monolithic pixel sensor, Particle detection, SOI",

author = "Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Lindsay Glesener and Chinh Vu",

note = "Funding Information: This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine. ",

year = "2007",

month = dec,

day = "21",

doi = "10.1016/j.nima.2007.09.042",

language = "English (US)",

volume = "583",

pages = "526--528",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

AU - Battaglia, Marco

AU - Bisello, Dario

AU - Contarato, Devis

AU - Denes, Peter

AU - Giubilato, Piero

AU - Glesener, Lindsay

AU - Vu, Chinh

N1 - Funding Information: This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine.

PY - 2007/12/21

Y1 - 2007/12/21

N2 - This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.

AB - This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.

KW - CMOS technology

KW - Monolithic pixel sensor

KW - Particle detection

KW - SOI

UR - https://www.scopus.com/pages/publications/36148953875

UR - https://www.scopus.com/pages/publications/36148953875#tab=citedBy

U2 - 10.1016/j.nima.2007.09.042

DO - 10.1016/j.nima.2007.09.042

M3 - Article

AN - SCOPUS:36148953875

SN - 0168-9002

VL - 583

SP - 526

EP - 528

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2-3

ER -

A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

Abstract

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