This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.
|Original language||English (US)|
|Number of pages||3|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|State||Published - Dec 21 2007|
Bibliographical noteFunding Information:
This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine.
- CMOS technology
- Monolithic pixel sensor
- Particle detection