A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Chinh Vu

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.

Original languageEnglish (US)
Pages (from-to)526-528
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number2-3
StatePublished - Dec 21 2007

Bibliographical note

Funding Information:
This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine.


  • CMOS technology
  • Monolithic pixel sensor
  • Particle detection
  • SOI


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