Abstract
This letter presents the design of a monolithic pixel sensor with 10 × 10 μ m2 pixels in OKI 0.15 μ m fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV e- beam at the LBNL ALS.
Original language | English (US) |
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Pages (from-to) | 526-528 |
Number of pages | 3 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 583 |
Issue number | 2-3 |
DOIs | |
State | Published - Dec 21 2007 |
Bibliographical note
Funding Information:This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We are indebted to the ALS staff for their assistance and the excellent performance of the machine.
Keywords
- CMOS technology
- Monolithic pixel sensor
- Particle detection
- SOI