A method to evaluate the skew by data dependent gate loading

Yanfeng Jiang, Xiaobo Zhang, Bing Yang, Jiaxin Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the skew by data dependent gate loading has been analysized. A method based on the concept of MOS parametric capacitance has been proposed. According to different data dependent of the MOS transistor, including transient channel charge and Miller effects, the values of capacitance in different data loadings have been extracted. Two clock tree routes have been analyzed by using the gate loading effect. Results revealed that the simulation result including the gate loading approaches to the actual ones closely.

Original languageEnglish (US)
Title of host publicationProceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages451-454
Number of pages4
DOIs
StatePublished - Nov 16 2009
Event2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China
Duration: Jul 6 2009Jul 10 2009

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
CountryChina
CitySuzhou
Period7/6/097/10/09

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