A macro model of RF Schottky diode in 22-nm CMOS and its application

Chao Xu, Pingping Yu, Yanfeng Jiang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


RF Schottky Barrier Diode (SBD) device can be compatible with deep submicron CMOS process, which is a research edge-cutting technology in the field of microelectronics. An accurate device model is highly required by the relevant circuit simulation work. In this paper, a macro device model of SBD in 22 nm CMOS node is developed based on the actual device structure. To increase its accuracy, a novel iterative algorithm is employed during the model parameter extraction. The simulation results are consistent with experimental data in frequency range from 10 MHz to 10 GHz, indicating that the developed SBD model can accurately reflect the DC and RF characteristics of the 22 nm device. Moreover, the application of the developed RF SBD device model is verified based on RF energy harvesting circuit in terms of the output voltage and efficiency, showing the feasibility of the developed SBD model in RF integrated circuit.

Original languageEnglish (US)
Pages (from-to)7-11
Number of pages5
JournalSolid-State Electronics
StatePublished - Apr 2019

Bibliographical note

Funding Information:
This work was supported under National Science Foundation of China (NSFC) Contract No. 61774078 .

Publisher Copyright:
© 2019 Elsevier Ltd


  • Equivalent circuit model
  • Parameter extraction
  • Radio frequency circuit
  • Schottky Barrier Diode


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