@inproceedings{615dd13434fd4c91872dbbcbba50adcd,
title = "A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme",
abstract = "A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell V TH window by >170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.",
author = "Song, {Seung Hwan} and Chun, {Ki Chul} and Kim, {Chris H.}",
year = "2012",
doi = "10.1109/VLSIC.2012.6243824",
language = "English (US)",
isbn = "9781467308458",
series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",
pages = "130--131",
booktitle = "2012 Symposium on VLSI Circuits, VLSIC 2012",
note = "2012 Symposium on VLSI Circuits, VLSIC 2012 ; Conference date: 13-06-2012 Through 15-06-2012",
}