A kinetics and transport model of dichlorosilane chemical vapor deposition

K. L. Knutson, R. W. Carr, W. H. Liu, S. A. Campbell

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Abstract

Computational fluid dynamics is employed to examine silicon growth on a (100) surface in a dichlorosilane-hydrogen chemical vapor deposition (CVD) system. Species balaces are solved in conjunction with mass, momentum, and energy balances to predict growth rates in the system. The gas-phase mechanism includes the DCS decompositions SiH2Cl2 → SiCl2 + H2 and SiH2Cl2 → SiHCl + HCl and the surface mechanism accounts for adsorption and growth from SiCl2, SiHCl, and SiH2Cl2. Arrhenius plot from the model show good agreement with experiment for overall growth rates at low DCS inflow concentrations but over predicts growth rates for higher DCS inflow concentrations. A sensitivity analysis is presented in the form of Arrhenius plot for several of the more important reactions included in the mechanism. The model suggests that growth rates are very sensitive to the gas-phase decomposition of SiH2Cl2 and the dissociative adsorption of SiH2Cl2 and not very sensitive to the dissociative adsorption of H2 and the activation energy for the surface growth from adsorbed SiCl and H by elimination of HCl.

Original languageEnglish (US)
Pages (from-to)191-204
Number of pages14
JournalJournal of Crystal Growth
Volume140
Issue number1-2
DOIs
StatePublished - Jun 1994

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