TY - JOUR
T1 - A holistic analysis of circuit timing variations in 3D-ICs with thermal and TSV-induced stress considerations
AU - Marella, Sravan K.
AU - Kumar, Sanjay V.
AU - Sapatnekar, Sachin S.
PY - 2012
Y1 - 2012
N2 - In 3D ICs, TSV-induced thermal residual stress impacts transistor mobilities due to the piezoresistive effect. This phenomenon is coupled with other temperature effects on transistor parameters that are seen even in the absence of TSVs. In this paper, analytical models are developed to holistically represent the effect of thermally-induced variations on circuit timing. The analysis is based on a semianalytic formulation that is demonstrated to accurately capture the biaxial nature of TSV stress and its effect on delay.
AB - In 3D ICs, TSV-induced thermal residual stress impacts transistor mobilities due to the piezoresistive effect. This phenomenon is coupled with other temperature effects on transistor parameters that are seen even in the absence of TSVs. In this paper, analytical models are developed to holistically represent the effect of thermally-induced variations on circuit timing. The analysis is based on a semianalytic formulation that is demonstrated to accurately capture the biaxial nature of TSV stress and its effect on delay.
KW - 3D IC
KW - Finite Element Method
KW - Static Timing Analysis
KW - Through Silicon Via
UR - http://www.scopus.com/inward/record.url?scp=84872331334&partnerID=8YFLogxK
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U2 - 10.1145/2429384.2429450
DO - 10.1145/2429384.2429450
M3 - Conference article
AN - SCOPUS:84872331334
SN - 1092-3152
SP - 317
EP - 324
JO - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
JF - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
M1 - 6386629
T2 - 2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012
Y2 - 5 November 2012 through 8 November 2012
ER -