A Holistic Analysis of Circuit Performance Variations in 3-D ICs with Thermal and TSV-Induced Stress Considerations

Engineering

• Analytical Model 33%
• Axisymmetric 33%
• Biaxial Stress 33%
• Boussinesq's Hypothesis 33%
• Circuit Performance 100%
• Electric Potential 66%
• Fields 33%
• Induced Stress 100%
• Level Analysis 33%
• Models 33%
• Networks (Circuits) 33%
• Silicon 100%
• Strain 33%
• Stress Model 33%
• Superposition 33%
• Temperature 33%
• Thermal Residual Stress 33%
• Thermal Stress 33%
• Velocity 66%