A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications

Christopher Coen; Saeed Zeinolabedinzadeh; Mehmet Kaynak; Bernd Tillack; John D. Cressler

doi:10.1109/RFIC.2016.7508241

A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications

Christopher Coen
, Saeed Zeinolabedinzadeh
, Mehmet Kaynak
, Bernd Tillack
, John D. Cressler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

41 Scopus citations

Abstract

This paper presents a 138-170 GHz active frequency doubler implemented in a 0.13 μm SiGe BiCMOS technology with a peak output power of 5.6 dBm and peak power-added efficiency of 7.6%. The doubler achieves a peak conversion gain of 4.9 dB and consumes only 36 mW of DC power at peak drive through the use of a push-push frequency doubling stage optimized for low drive power, along with a low-power output buffer. To the best of our knowledge, this doubler achieves the highest output power, efficiency, and fundamental frequency suppression of all D-band and G-band SiGe HBT frequency doublers to date.

Original language	English (US)
Title of host publication	RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium
Editors	Srenik Mehta, Li Lin
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23-26
Number of pages	4
ISBN (Electronic)	9781467386500
DOIs	https://doi.org/10.1109/RFIC.2016.7508241
State	Published - Jul 8 2016
Externally published	Yes
Event	2016 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2016 - San Francisco, United States Duration: May 22 2016 → May 24 2016

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume	2016-July
ISSN (Print)	1529-2517

Other

Other	2016 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2016
Country/Territory	United States
City	San Francisco
Period	5/22/16 → 5/24/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

D-band
frequency doubler
frequency multiplier
millimeter-wave integrated circuits
SiGe HBT

Publisher link

10.1109/RFIC.2016.7508241

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Coen, C., Zeinolabedinzadeh, S., Kaynak, M., Tillack, B., & Cressler, J. D. (2016). A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications. In S. Mehta, & L. Lin (Eds.), RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium (pp. 23-26). Article 7508241 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2016.7508241

A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications. / Coen, Christopher; Zeinolabedinzadeh, Saeed; Kaynak, Mehmet et al.
RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium. ed. / Srenik Mehta; Li Lin. Institute of Electrical and Electronics Engineers Inc., 2016. p. 23-26 7508241 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Coen, C, Zeinolabedinzadeh, S, Kaynak, M, Tillack, B & Cressler, JD 2016, A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications. in S Mehta & L Lin (eds), RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium., 7508241, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 23-26, 2016 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2016, San Francisco, United States, 5/22/16. https://doi.org/10.1109/RFIC.2016.7508241

Coen C, Zeinolabedinzadeh S, Kaynak M, Tillack B, Cressler JD. A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications. In Mehta S, Lin L, editors, RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium. Institute of Electrical and Electronics Engineers Inc. 2016. p. 23-26. 7508241. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). doi: 10.1109/RFIC.2016.7508241

Coen, Christopher ; Zeinolabedinzadeh, Saeed ; Kaynak, Mehmet et al. / A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications. RFIC 2016 - 2016 IEEE Radio Frequency Integrated Circuits Symposium. editor / Srenik Mehta ; Li Lin. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 23-26 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

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abstract = "This paper presents a 138-170 GHz active frequency doubler implemented in a 0.13 μm SiGe BiCMOS technology with a peak output power of 5.6 dBm and peak power-added efficiency of 7.6\%. The doubler achieves a peak conversion gain of 4.9 dB and consumes only 36 mW of DC power at peak drive through the use of a push-push frequency doubling stage optimized for low drive power, along with a low-power output buffer. To the best of our knowledge, this doubler achieves the highest output power, efficiency, and fundamental frequency suppression of all D-band and G-band SiGe HBT frequency doublers to date.",

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AB - This paper presents a 138-170 GHz active frequency doubler implemented in a 0.13 μm SiGe BiCMOS technology with a peak output power of 5.6 dBm and peak power-added efficiency of 7.6%. The doubler achieves a peak conversion gain of 4.9 dB and consumes only 36 mW of DC power at peak drive through the use of a push-push frequency doubling stage optimized for low drive power, along with a low-power output buffer. To the best of our knowledge, this doubler achieves the highest output power, efficiency, and fundamental frequency suppression of all D-band and G-band SiGe HBT frequency doublers to date.

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A highly-efficient 138-170 GHz SiGe HBT frequency doubler for power-constrained applications

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