A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme

Keyphrases

• High Density 100%
• Data Independence 100%
• Bitline Leakage 100%
• Subthreshold SRAM 100%
• Virtual Ground 100%
• Reverse Short Channel Effect 50%
• Bitline 50%
• Writability 50%
• Circuit Variability 50%
• 10T SRAM Cell 50%
• Junction Capacitance 50%
• SRAM Test 50%
• Minimum Voltage 50%

Engineering

• Operating Voltage 100%