A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme

Tae Hyoung Kim, Jason Liu, John Keane, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

97 Scopus citations

Abstract

A 10T SRAM cell with data-independent bitline leakage and a virtual-ground replica scheme allows 1k cells per bitline in subthreshold SRAMs. Reverse short-channel effect is used to improve writability, offer higher speed, reduce junction capacitance, and decrease circuit variability. A 0.13μm, the 480kb SRAM test chip shows a minimum operating voltage of 0.20V.

Original languageEnglish (US)
Title of host publication2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Pages330-331+606+321
DOIs
StatePublished - Sep 27 2007
Event54th IEEE International Solid-State Circuits Conference, ISSCC 2007 - San Francisco, CA, United States
Duration: Feb 11 2007Feb 15 2007

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Other

Other54th IEEE International Solid-State Circuits Conference, ISSCC 2007
CountryUnited States
CitySan Francisco, CA
Period2/11/072/15/07

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    Kim, T. H., Liu, J., Keane, J., & Kim, C. H. (2007). A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. In 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers (pp. 330-331+606+321). [4242399] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2007.373428