A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme

Tae Hyoung Kim; Jason Liu; John Keane; Chris H. Kim

doi:10.1109/ISSCC.2007.373428

A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme

Tae Hyoung Kim, Jason Liu, John Keane, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

114 Scopus citations

Abstract

A 10T SRAM cell with data-independent bitline leakage and a virtual-ground replica scheme allows 1k cells per bitline in subthreshold SRAMs. Reverse short-channel effect is used to improve writability, offer higher speed, reduce junction capacitance, and decrease circuit variability. A 0.13μm, the 480kb SRAM test chip shows a minimum operating voltage of 0.20V.

Original language	English (US)
Title of host publication	2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	330-332
Number of pages	3
ISBN (Print)	1424408539, 9781424408535
DOIs	https://doi.org/10.1109/ISSCC.2007.373428
State	Published - 2007
Event	54th IEEE International Solid-State Circuits Conference, ISSCC 2007 - San Francisco, CA, United States Duration: Feb 11 2007 → Feb 15 2007

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)	0193-6530

Other

Other	54th IEEE International Solid-State Circuits Conference, ISSCC 2007
Country/Territory	United States
City	San Francisco, CA
Period	2/11/07 → 2/15/07

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10.1109/ISSCC.2007.373428

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Kim, T. H., Liu, J., Keane, J., & Kim, C. H. (2007). A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. In 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers (pp. 330-332). Article 4242399 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2007.373428

A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. / Kim, Tae Hyoung; Liu, Jason; Keane, John et al.
2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2007. p. 330-332 4242399 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, TH, Liu, J, Keane, J & Kim, CH 2007, A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. in 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers., 4242399, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 330-332, 54th IEEE International Solid-State Circuits Conference, ISSCC 2007, San Francisco, CA, United States, 2/11/07. https://doi.org/10.1109/ISSCC.2007.373428

Kim TH, Liu J, Keane J, Kim CH. A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. In 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2007. p. 330-332. 4242399. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2007.373428

Kim, Tae Hyoung ; Liu, Jason ; Keane, John et al. / A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme. 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2007. pp. 330-332 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "A 10T SRAM cell with data-independent bitline leakage and a virtual-ground replica scheme allows 1k cells per bitline in subthreshold SRAMs. Reverse short-channel effect is used to improve writability, offer higher speed, reduce junction capacitance, and decrease circuit variability. A 0.13μm, the 480kb SRAM test chip shows a minimum operating voltage of 0.20V.",

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A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme

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