A finite-oxide thickness-based analytical model for negative bias temperature instability

Keyphrases

• Oxide Thickness 100%
• Analytical Model 100%
• Negative Bias Temperature Instability 100%
• Digital Circuits 16%
• Annealing 16%
• Reaction-diffusion 16%
• Physical Effects 16%
• Polysilicon 16%
• Reliable Operation 16%
• Generalized Framework 16%
• Temporal Degradation 16%
• Circuit Degradation 16%
• PMOS Transistor 16%
• Trap Generation 16%
• Digital Circuit Design 16%
• Finite Duration 16%
• Interface Traps 16%
• Technology Scaling 16%

Engineering

• Oxide Thickness 100%
• Negative-Bias Temperature Instability 100%
• Analytical Model 100%
• Digital Circuits 16%
• Function of Time 16%
• Reliable Operation 16%
• Periodic Time 16%
• Interface Trap 16%
• Digital Electronics 16%
• Polysilicon 16%