A ferroelectric semiconductor field-effect transistor

Keyphrases

• Field-effect Transistors 100%
• Ferroelectric Semiconductors 100%
• In2Se3 66%
• High Performance 33%
• Transistor 33%
• Low Voltage 33%
• Atomic Layer Deposition 33%
• Gate Dielectric 33%
• Band Gap 33%
• Polarization State 33%
• Atomic Layers 33%
• HfO2 33%
• Al2O3 Oxide 33%
• Channel Conductance 33%
• Retention Time 33%
• Channel Material 33%
• Hafnium Oxide 33%
• Gate Insulator 33%
• Ferroelectric Materials 33%
• Passivation Effect 33%
• Large-area Growth 33%
• Ferroelectric Field-effect Transistor (FeFET) 33%
• Indium Selenide 33%
• 2D Ferroelectrics 33%
• Room-temperature Ferroelectricity 33%
• On-state Current 33%
• High On-off Ratio 33%
• Large Memory Window 33%
• Nonvolatile Memory Technologies 33%

Engineering

• Field-Effect Transistor 100%
• Two Dimensional 33%
• Nonvolatile Memory 33%
• Gate Dielectric 33%
• Channel Conductance 33%
• Atomic Layer 33%
• Passivation 33%
• Polarization State 33%
• Room Temperature 33%
• Atomic Layer Deposition 33%
• Supply Voltage 33%
• Aluminum Oxide 33%
• Retention Time 33%
• Band Gap 33%

Material Science

• Ferroelectric Material 100%
• Field Effect Transistors 100%
• Aluminum Oxide 40%
• Ferroelectricity 40%
• Transistor 20%
• Indium 20%
• Hafnium 20%
• Oxide Compound 20%
• Dielectric Material 20%