A fast magnetoelectric device based on current-driven domain wall propagation

Meghna G. Mankalale; Zhaoxin Liang; Angeline Klemm Smith; D. C. Mahendra; Mahdi Jamali; Jian Ping Wang; Sachin S. Sapatnekar

doi:10.1109/DRC.2016.7548457

A fast magnetoelectric device based on current-driven domain wall propagation

Meghna G. Mankalale
, Zhaoxin Liang
, Angeline Klemm Smith
, D. C. Mahendra
, Mahdi Jamali
, Jian Ping Wang
, Sachin S. Sapatnekar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopillars to drive a domain wall (DW) that switches an output nanopillar using STT [7], and (c) using magnetoelectric (ME) switching at the input, combined with DW automotion, to switch an output state [3]. All of these devices have delays of several nanoseconds. The energy for (a) and (b) is in the range of femtoJoules, while the ME mechanism in (c) facilitates greater energy-efficiency, in the aJ range. These numbers fall some distance away from CMOS, where gate delays and switching energies are in the range of picoseconds (ps) and attoJoules (aJ), respectively.

Original language	English (US)
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548457
State	Published - Aug 22 2016
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2016-August
ISSN (Print)	1548-3770

Other

Other	74th Annual Device Research Conference, DRC 2016
Country/Territory	United States
City	Newark
Period	6/19/16 → 6/22/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Publisher link

10.1109/DRC.2016.7548457

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Mankalale, M. G., Liang, Z., Smith, A. K., Mahendra, D. C., Jamali, M., Wang, J. P., & Sapatnekar, S. S. (2016). A fast magnetoelectric device based on current-driven domain wall propagation. In 74th Annual Device Research Conference, DRC 2016 Article 7548457 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548457

A fast magnetoelectric device based on current-driven domain wall propagation. / Mankalale, Meghna G.; Liang, Zhaoxin; Smith, Angeline Klemm et al.
74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7548457 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mankalale, MG, Liang, Z, Smith, AK, Mahendra, DC, Jamali, M, Wang, JP & Sapatnekar, SS 2016, A fast magnetoelectric device based on current-driven domain wall propagation. in 74th Annual Device Research Conference, DRC 2016., 7548457, Device Research Conference - Conference Digest, DRC, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 74th Annual Device Research Conference, DRC 2016, Newark, United States, 6/19/16. https://doi.org/10.1109/DRC.2016.7548457

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title = "A fast magnetoelectric device based on current-driven domain wall propagation",

abstract = "Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopillars to drive a domain wall (DW) that switches an output nanopillar using STT [7], and (c) using magnetoelectric (ME) switching at the input, combined with DW automotion, to switch an output state [3]. All of these devices have delays of several nanoseconds. The energy for (a) and (b) is in the range of femtoJoules, while the ME mechanism in (c) facilitates greater energy-efficiency, in the aJ range. These numbers fall some distance away from CMOS, where gate delays and switching energies are in the range of picoseconds (ps) and attoJoules (aJ), respectively.",

author = "Mankalale, \{Meghna G.\} and Zhaoxin Liang and Smith, \{Angeline Klemm\} and Mahendra, \{D. C.\} and Mahdi Jamali and Wang, \{Jian Ping\} and Sapatnekar, \{Sachin S.\}",

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AU - Wang, Jian Ping

AU - Sapatnekar, Sachin S.

PY - 2016/8/22

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N2 - Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopillars to drive a domain wall (DW) that switches an output nanopillar using STT [7], and (c) using magnetoelectric (ME) switching at the input, combined with DW automotion, to switch an output state [3]. All of these devices have delays of several nanoseconds. The energy for (a) and (b) is in the range of femtoJoules, while the ME mechanism in (c) facilitates greater energy-efficiency, in the aJ range. These numbers fall some distance away from CMOS, where gate delays and switching energies are in the range of picoseconds (ps) and attoJoules (aJ), respectively.

AB - Several emerging spintronic devices have recently been proposed, performing computation by (a) generating spin currents based on input magnet states to switch an output magnet state using Spin-Transfer Torque (STT) [1,2], (b) using multiple nanopillars to drive a domain wall (DW) that switches an output nanopillar using STT [7], and (c) using magnetoelectric (ME) switching at the input, combined with DW automotion, to switch an output state [3]. All of these devices have delays of several nanoseconds. The energy for (a) and (b) is in the range of femtoJoules, while the ME mechanism in (c) facilitates greater energy-efficiency, in the aJ range. These numbers fall some distance away from CMOS, where gate delays and switching energies are in the range of picoseconds (ps) and attoJoules (aJ), respectively.

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A fast magnetoelectric device based on current-driven domain wall propagation

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