A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function

Muqing Liu, Chen Zhou, Qianying Tang, Keshab K. Parhi, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by the inherent process mismatch between transistors. These properties make SRAM an attractive circuit for generating encryption keys. The primary challenge for SRAM based key generation, however, is the poor stability when the circuit is subject to random noise, temperature and voltage changes, and device aging. Temporal majority voting (TMV) and bit masking were used in previous works to identify and store the location of unstable or marginally stable SRAM cells. However, TMV requires a long test time and significant hardware resources. In addition, the number of repetitive power-ups required to find the most stable cells is prohibitively high. To overcome the shortcomings of TMV, we propose a novel data remanence based technique to detect SRAM cells with the highest stability for reliable key generation. This approach requires only two remanence tests: Writing '1' (or '0') to the entire array and momentarily shutting down the power until a few cells flip. We exploit the fact that the cells that are easily flipped are the most robust cells when written with the opposite data. The proposed method is more effective in finding the most stable cells in a large SRAM array than a TMV scheme with 1,000 power-up tests. Experimental studies show that the 256-bit key generated from a 512 kbit SRAM using the proposed data remanence method is 100% stable under different temperatures, power ramp up times, and device aging.

Original languageEnglish (US)
Title of host publicationISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509060238
DOIs
StatePublished - Aug 11 2017
Event22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017 - Taipei, Taiwan, Province of China
Duration: Jul 24 2017Jul 26 2017

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Other

Other22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017
CountryTaiwan, Province of China
CityTaipei
Period7/24/177/26/17

Fingerprint

Remanence
Static random access storage
Aging of materials
Networks (circuits)
Hardware security
Cryptography
Transistors
Hardware
Temperature
Electric potential

Keywords

  • Physical unclonable function
  • SRAM
  • data remanence
  • stable key generation

Cite this

Liu, M., Zhou, C., Tang, Q., Parhi, K. K., & Kim, C. H. (2017). A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function. In ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design [8009192] (Proceedings of the International Symposium on Low Power Electronics and Design). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLPED.2017.8009192

A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function. / Liu, Muqing; Zhou, Chen; Tang, Qianying; Parhi, Keshab K.; Kim, Chris H.

ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2017. 8009192 (Proceedings of the International Symposium on Low Power Electronics and Design).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, M, Zhou, C, Tang, Q, Parhi, KK & Kim, CH 2017, A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function. in ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design., 8009192, Proceedings of the International Symposium on Low Power Electronics and Design, Institute of Electrical and Electronics Engineers Inc., 22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017, Taipei, Taiwan, Province of China, 7/24/17. https://doi.org/10.1109/ISLPED.2017.8009192
Liu M, Zhou C, Tang Q, Parhi KK, Kim CH. A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function. In ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc. 2017. 8009192. (Proceedings of the International Symposium on Low Power Electronics and Design). https://doi.org/10.1109/ISLPED.2017.8009192
Liu, Muqing ; Zhou, Chen ; Tang, Qianying ; Parhi, Keshab K. ; Kim, Chris H. / A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function. ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2017. (Proceedings of the International Symposium on Low Power Electronics and Design).
@inproceedings{1d21af2c872d4dc6b41b6a1c374845b1,
title = "A data remanence based approach to generate 100{\%} stable keys from an SRAM physical unclonable function",
abstract = "The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by the inherent process mismatch between transistors. These properties make SRAM an attractive circuit for generating encryption keys. The primary challenge for SRAM based key generation, however, is the poor stability when the circuit is subject to random noise, temperature and voltage changes, and device aging. Temporal majority voting (TMV) and bit masking were used in previous works to identify and store the location of unstable or marginally stable SRAM cells. However, TMV requires a long test time and significant hardware resources. In addition, the number of repetitive power-ups required to find the most stable cells is prohibitively high. To overcome the shortcomings of TMV, we propose a novel data remanence based technique to detect SRAM cells with the highest stability for reliable key generation. This approach requires only two remanence tests: Writing '1' (or '0') to the entire array and momentarily shutting down the power until a few cells flip. We exploit the fact that the cells that are easily flipped are the most robust cells when written with the opposite data. The proposed method is more effective in finding the most stable cells in a large SRAM array than a TMV scheme with 1,000 power-up tests. Experimental studies show that the 256-bit key generated from a 512 kbit SRAM using the proposed data remanence method is 100{\%} stable under different temperatures, power ramp up times, and device aging.",
keywords = "Physical unclonable function, SRAM, data remanence, stable key generation",
author = "Muqing Liu and Chen Zhou and Qianying Tang and Parhi, {Keshab K.} and Kim, {Chris H.}",
year = "2017",
month = "8",
day = "11",
doi = "10.1109/ISLPED.2017.8009192",
language = "English (US)",
series = "Proceedings of the International Symposium on Low Power Electronics and Design",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design",

}

TY - GEN

T1 - A data remanence based approach to generate 100% stable keys from an SRAM physical unclonable function

AU - Liu, Muqing

AU - Zhou, Chen

AU - Tang, Qianying

AU - Parhi, Keshab K.

AU - Kim, Chris H.

PY - 2017/8/11

Y1 - 2017/8/11

N2 - The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by the inherent process mismatch between transistors. These properties make SRAM an attractive circuit for generating encryption keys. The primary challenge for SRAM based key generation, however, is the poor stability when the circuit is subject to random noise, temperature and voltage changes, and device aging. Temporal majority voting (TMV) and bit masking were used in previous works to identify and store the location of unstable or marginally stable SRAM cells. However, TMV requires a long test time and significant hardware resources. In addition, the number of repetitive power-ups required to find the most stable cells is prohibitively high. To overcome the shortcomings of TMV, we propose a novel data remanence based technique to detect SRAM cells with the highest stability for reliable key generation. This approach requires only two remanence tests: Writing '1' (or '0') to the entire array and momentarily shutting down the power until a few cells flip. We exploit the fact that the cells that are easily flipped are the most robust cells when written with the opposite data. The proposed method is more effective in finding the most stable cells in a large SRAM array than a TMV scheme with 1,000 power-up tests. Experimental studies show that the 256-bit key generated from a 512 kbit SRAM using the proposed data remanence method is 100% stable under different temperatures, power ramp up times, and device aging.

AB - The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by the inherent process mismatch between transistors. These properties make SRAM an attractive circuit for generating encryption keys. The primary challenge for SRAM based key generation, however, is the poor stability when the circuit is subject to random noise, temperature and voltage changes, and device aging. Temporal majority voting (TMV) and bit masking were used in previous works to identify and store the location of unstable or marginally stable SRAM cells. However, TMV requires a long test time and significant hardware resources. In addition, the number of repetitive power-ups required to find the most stable cells is prohibitively high. To overcome the shortcomings of TMV, we propose a novel data remanence based technique to detect SRAM cells with the highest stability for reliable key generation. This approach requires only two remanence tests: Writing '1' (or '0') to the entire array and momentarily shutting down the power until a few cells flip. We exploit the fact that the cells that are easily flipped are the most robust cells when written with the opposite data. The proposed method is more effective in finding the most stable cells in a large SRAM array than a TMV scheme with 1,000 power-up tests. Experimental studies show that the 256-bit key generated from a 512 kbit SRAM using the proposed data remanence method is 100% stable under different temperatures, power ramp up times, and device aging.

KW - Physical unclonable function

KW - SRAM

KW - data remanence

KW - stable key generation

UR - http://www.scopus.com/inward/record.url?scp=85028590529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028590529&partnerID=8YFLogxK

U2 - 10.1109/ISLPED.2017.8009192

DO - 10.1109/ISLPED.2017.8009192

M3 - Conference contribution

AN - SCOPUS:85028590529

T3 - Proceedings of the International Symposium on Low Power Electronics and Design

BT - ISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design

PB - Institute of Electrical and Electronics Engineers Inc.

ER -