Abstract
2-dimensional (2-D) device simulations have been performed to study the scaling of strained-Si/SiGe nMODFETs. Device fabrication has been conducted to verify the simulation results. It is found that lateral scaling alone cannot improve the device performance. In order to achieve high speed (fT > 300 GHz), acceptable voltage gain (GV > 10) and good turnoff characteristics (Ion/Ioff > 103) for RF applications, vertical scaling of the layer structure and source/drain junctions is also required. Preliminary experimental results support the scaling theory.
Original language | English (US) |
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Title of host publication | 2002 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 59-62 |
Number of pages | 4 |
Volume | 2002-January |
ISBN (Electronic) | 4891140275 |
DOIs | |
State | Published - Jan 1 2002 |
Event | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002 - Kobe, Japan Duration: Sep 4 2002 → Sep 6 2002 |
Other
Other | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002 |
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Country/Territory | Japan |
City | Kobe |
Period | 9/4/02 → 9/6/02 |
Keywords
- CMOS technology
- Epitaxial layers
- Germanium silicon alloys
- HEMTs
- Medical simulation
- MODFETs
- Radio frequency
- Silicon germanium
- Solid modeling