A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications

Qiqing Christine Ouyang, S. J. Koester, J. O. Chu, A. Grill, S. Subbanna, D. A. Hennan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

2-dimensional (2-D) device simulations have been performed to study the scaling of strained-Si/SiGe nMODFETs. Device fabrication has been conducted to verify the simulation results. It is found that lateral scaling alone cannot improve the device performance. In order to achieve high speed (fT > 300 GHz), acceptable voltage gain (GV > 10) and good turnoff characteristics (Ion/Ioff > 103) for RF applications, vertical scaling of the layer structure and source/drain junctions is also required. Preliminary experimental results support the scaling theory.

Original languageEnglish (US)
Title of host publication2002 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages59-62
Number of pages4
Volume2002-January
ISBN (Electronic)4891140275
DOIs
StatePublished - Jan 1 2002
EventInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002 - Kobe, Japan
Duration: Sep 4 2002Sep 6 2002

Other

OtherInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002
CountryJapan
CityKobe
Period9/4/029/6/02

Keywords

  • CMOS technology
  • Epitaxial layers
  • Germanium silicon alloys
  • HEMTs
  • Medical simulation
  • MODFETs
  • Radio frequency
  • Silicon germanium
  • Solid modeling

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